Ibipimo ngenderwaho byashyizwe mu bikorwa na Jiangsu Yangjie Runau Semiconductor Co mu gukora diode yo gusudira byari bikurikira:
1. GB / T 4023—1997 Ibikoresho Bitandukanye Byibikoresho bya Semiconductor hamwe nizunguruka zuzuye Igice cya 2: Diode ikosora
2. GB / T 4937—1995 Uburyo bwo Gukoresha Ikizamini Cyubumenyi bwikirere kubikoresho bya Semiconductor
3. JB / T 2423—1999 Ibikoresho bya Semiconductor Power - Uburyo bwo Kwerekana
4. JB / T 4277—1996 Ibikoresho byo gupakira ibikoresho bya Semiconductor
5. JB / T 7624—1994 Uburyo bwo Kwipimisha Diode
Icyitegererezo n'Ubunini
1. Izina ry'icyitegererezo: Icyitegererezo cya diode yo gusudira yerekeza ku mabwiriza ya JB / T 2423-1999, kandi ibisobanuro bya buri gice cy'icyitegererezo bigaragara mu gishushanyo cya 1 hepfo:
2. Ibimenyetso bishushanyo hamwe na terefone (sub) iranga
Ibishushanyo mbonera hamwe nibiranga ibimenyetso byerekanwe mubishusho 2, umwambi werekeza kuri cathode.
3. Ibipimo byerekana
Imiterere ya diode isudira ni convex n'ubwoko bwa disiki, kandi imiterere ifite ubunini igomba kuba yujuje ibisabwa mu gishushanyo cya 3 na Imbonerahamwe 1.
| Ingingo | Igipimo (mm) | ||
| ZW7100 | ZW12000 | ZW16000 / ZW18000 | |
| Cathode flange (Dmax) | 61 | 76 | 102 |
| Cathode na anode Mesa (D.1) | 44 ± 0.2 | 57 ± 0.2 | 68 ± 0.2 |
| Umubare munini wa diameter yimpeta (D.2max) | 55.5 | 71.5 | 90 |
| Umubyimba wose (A) | 8 ± 1 | 8 ± 1 | 13 ± 2 |
| Umwobo | Diameter yumwobo ： φ3.5 ± 0.2mm ， Ubujyakuzimu: 1.5 ± 0.3mm | ||
Ibipimo n'ibiranga
1. Urwego rw'ibipimo
Urukurikirane rw'ibisubizo byisubiramo (VRRM) nkuko bigaragara mu mbonerahamwe ya 2
Imbonerahamwe 2 Urwego rwa voltage
| VRRM（V） | 200 | 400 |
| Urwego | 02 | 04 |
2. Gabanya indangagaciro
Indangagaciro ntarengwa zigomba kubahiriza Imbonerahamwe 3 kandi zigashyirwa mubikorwa byose byubushyuhe.
Imbonerahamwe 3 Kugabanya Agaciro
| Gabanya Agaciro | Ikimenyetso | Igice | Agaciro | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Ubushyuhe | Tcase | ℃ | -40 ～ 85 | |||
| Ubushyuhe buhwanye (max) | T（Vj） | ℃ | 170 | |||
| Ubushyuhe bwo kubika | Tstg | ℃ | -40 ～ 170 | |||
| Gusubiramo impinga ihindagurika ya voltage (max) | VRRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Subiza imbaraga zidasanzwe zidasubirwaho (max | VRSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Imbere ugereranije impuzandengo (max) | IF （AV） | A | 7100 | 12000 | 16000 | 18000 |
| Imbere (idasubiramo) kwiyongera kwinshi (max) | IFSM | A | 55000 | 85000 | 120000 | 135000 |
| I²t (max) | I²t | kA²s | 15100 | 36100 | 72000 | 91000 |
| Imbaraga zo kuzamuka | F | kN | 22 ～ 24 | 30 ～ 35 | 45 ～ 50 | 52 ～ 57 |
3. Indangagaciro
Imbonerahamwe 4 Indangagaciro ziranga agaciro
| Imiterere n'imiterere | Ikimenyetso | Igice | Agaciro | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Imbere ya voltage voltageFM= 5000A, T.j= 25 ℃ | VFM | V | 1.1 | 1.08 | 1.06 | 1.05 |
| Hindura isubiramo ryibihe bigezwehoTj= 25 ℃, T.j= 170 ℃ | IRRM | mA | 50 | 60 | 60 | 80 |
| Kurwanya Ubushyuhe Ihuriro-ku-rubanza | Rjc | ℃ / W. | 0.01 | 0.006 | 0.004 | 0.004 |
| Icyitonderwa: kubisabwa bidasanzwe nyamuneka ubaze | ||||||
Uwitekagusudira diodebyakozwe na Jiangsu Yangjie Runau Semiconductor ikoreshwa cyane mumashanyarazi yo gusudira, imashini yo gusudira yo hagati hamwe na high frequency kugeza 2000Hz cyangwa irenga.Hamwe na ultra-low forward peak voltage, ultra-low resistance resistance, imiterere yubuhanga bwo gukora ibihangano, ubushobozi buhebuje bwo gusimbuza imikorere ihamye kubakoresha isi yose, diode yo gusudira kuva Jiangsu Yangjie Runau Semiconductor nimwe mubikoresho byizewe byingufu zUbushinwa ibicuruzwa bya semiconductor.
Igihe cyo kohereza: Jun-14-2023