UBWOKO | VDRM V | VRRM V | IT (AV)@ 80 ℃ A | ITGQM @ CS A / µF | ITSM @ 10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃ / W. | |
CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | 90.90 | 125 | 0.027 |
CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | 61.66 | .5 0.57 | 125 | 0.017 |
CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | 61.66 | .5 0.57 | 125 | 0.017 |
CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | 61.66 | .5 0.57 | 125 | 0.017 |
CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | 901.90 | ≤0.50 | 125 | 0.05 |
CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | .53.5 | 1.9 | ≤0.35 | 125 | 0.03 |
CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | 60.60 | 125 | 0.012 |
CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Icyitonderwa:D- hamwe na digice cya iode, A.-nta gice cya diode
Mubisanzwe, abagurisha bahuza IGBT modules zashyizwe mubikorwa byo guhinduranya ibikoresho bya DC byoroshye.Module yamashanyarazi ni uruhande rumwe rushyushye.Ubushobozi bwibikoresho bugarukira kandi ntibukwiye guhuzwa murukurikirane, ubuzima bubi mumyuka yumunyu, vibration mbi anti-shock cyangwa umunaniro wumuriro.
Ubwoko bushya bwa press-contact-power-power-pack-pack igikoresho cya IGBT ntabwo gikemura gusa ibibazo byubusa mugikorwa cyo kugurisha, umunaniro wumuriro wibikoresho byo kugurisha hamwe nubushobozi buke bwo gukwirakwiza ubushyuhe bwuruhande rumwe ariko binakuraho ubukana bwumuriro hagati yibice bitandukanye, gabanya ingano n'uburemere.Kandi uzamure cyane imikorere ikora kandi yizewe kubikoresho bya IGBT.Nibyiza cyane guhaza ingufu-nyinshi, voltage-nini, ibisabwa-byiringirwa bya sisitemu yohereza DC byoroshye.
Gusimbuza abagurisha ubwoko bwubwoko bwa press-pack IGBT ni ngombwa.
Kuva mu mwaka wa 2010, ibikoresho bya Runau Electronics byateguwe kugira ngo biteze imbere ubwoko bushya bwa press-pack IGBT kandi bugere ku musaruro mu 2013. Imikorere yemejwe n’ubushobozi bw’igihugu kandi ibyagezweho byarangiye.
Ubu turashobora gukora no gutanga urukurikirane rwamakuru-pack IGBT ya IC murwego rwa 600A kugeza 3000A na VCES muri 1700V kugeza 6500V.Icyizere cyiza cyo gukanda imashini IGBT ikorerwa mu Bushinwa izashyirwa mu bikorwa mu Bushinwa uburyo bworoshye bwo kohereza amashanyarazi DC kandi biteganijwe ko bizaba indi ntera yo ku rwego rw'isi ku ruganda rukora amashanyarazi mu Bushinwa nyuma ya gari ya moshi yihuta.
Muri make Intangiriro yuburyo busanzwe:
1. Uburyo: Kanda-paki IGBT CSG07E1700
●Ibiranga amashanyarazi nyuma yo gupakira no gukanda
Hinduraparallelihujwediode yo gukira vubayashoje
● Parameter :
Agaciro kagereranijwe (25 ℃)
a.Umuyoboro wa Emitter Umuyoboro: VGES = 1700 (V)
b.Umuyoboro wa Emitteri Irembo: VCES = ± 20 (V)
c.Abakusanya Ibiriho: IC = 800 (A) ICP = 1600 (A)
d.Gukwirakwiza Imbaraga Zikusanya: PC = 4440 (W)
e.Ihuriro ry'akazi Ubushyuhe: Tj = -20 ~ 125 ℃
f.Ubushyuhe bwo kubika: Tstg = -40 ~ 125 ℃
Icyitonderwa: igikoresho kizangirika niba kirenze agaciro kagenwe
AmashanyaraziCharacteristics, TC = 125 ℃ , Rth (ubushyuhe bwumuriro waihuriro Kuriurubanza)ntarimo
a.Irembo riva muri iki gihe: IGES = ± 5 (μA)
b.Ikusanyirizo Emitter Ihagarika ICES Yubu = 250 (mA)
c.Umuyoboro wa Emitter Yuzuye Umuvuduko: VCE (sat) = 6 (V)
d.Irembo rya Emitter Threshold Umuvuduko: VGE (th) = 10 (V)
e.Hindura igihe: Ton = 2.5μs
f.Zimya igihe: Toff = 3μs
2. Uburyo: Kanda-paki IGBT CSG10F2500
●Ibiranga amashanyarazi nyuma yo gupakira no gukanda
Hinduraparallelihujwediode yo gukira vubayashoje
● Parameter :
Agaciro kagereranijwe (25 ℃)
a.Umuyoboro wa Emitter Umuyoboro: VGES = 2500 (V)
b.Umuyoboro wa Emitteri Irembo: VCES = ± 20 (V)
c.Abakusanya Ibiriho: IC = 600 (A) ICP = 2000 (A)
d.Gukwirakwiza Imbaraga Zikwirakwiza: PC = 4800 (W)
e.Ihuriro ry'akazi Ubushyuhe: Tj = -40 ~ 125 ℃
f.Ubushyuhe bwo kubika: Tstg = -40 ~ 125 ℃
Icyitonderwa: igikoresho kizangirika niba kirenze agaciro kagenwe
AmashanyaraziCharacteristics, TC = 125 ℃ , Rth (ubushyuhe bwumuriro waihuriro Kuriurubanza)ntarimo
a.Irembo riva muri iki gihe: IGES = ± 15 (μA)
b.Ikusanyamakuru Emitter Ihagarika ICES Yubu = 25 (mA)
c.Umuyoboro wa Emitter Yuzuye Umuvuduko: VCE (sat) = 3.2 (V)
d.Irembo rya Emitter Threshold Umuvuduko: VGE (th) = 6.3 (V)
e.Hindura igihe: Ton = 3.2μs
f.Zimya igihe: Toff = 9.8μs
g.Diode Imbere ya voltage: VF = 3.2 V.
h.Diode Isubiramo Igihe cyo Kugarura: Trr = 1.0 μs
3. Uburyo: Kanda-paki IGBT CSG10F4500
●Ibiranga amashanyarazi nyuma yo gupakira no gukanda
Hinduraparallelihujwediode yo gukira vubayashoje
● Parameter :
Agaciro kagereranijwe (25 ℃)
a.Umuyoboro wa Emitter Umuyoboro: VGES = 4500 (V)
b.Umuyoboro wa Emitteri Irembo: VCES = ± 20 (V)
c.Abakusanya Ibiriho: IC = 600 (A) ICP = 2000 (A)
d.Gukwirakwiza Imbaraga Zikwirakwiza: PC = 7700 (W)
e.Ihuriro ry'akazi Ubushyuhe: Tj = -40 ~ 125 ℃
f.Ubushyuhe bwo kubika: Tstg = -40 ~ 125 ℃
Icyitonderwa: igikoresho kizangirika niba kirenze agaciro kagenwe
AmashanyaraziCharacteristics, TC = 125 ℃ , Rth (ubushyuhe bwumuriro waihuriro Kuriurubanza)ntarimo
a.Irembo riva muri iki gihe: IGES = ± 15 (μA)
b.Ikusanyirizo Emitter Ihagarika ICES Yubu = 50 (mA)
c.Umuyoboro wa Emitter Yuzuye Umuvuduko: VCE (sat) = 3.9 (V)
d.Irembo rya Emitter Threshold Umuvuduko: VGE (th) = 5.2 (V)
e.Hindura igihe: Ton = 5.5μs
f.Zimya igihe: Toff = 5.5μs
g.Diode Imbere ya voltage: VF = 3.8 V.
h.Diode Yisubiraho Igihe cyo Kugarura: Trr = 2.0 μs
Icyitonderwa:Press-pack IGBT ni akarusho mugihe kirekire cyokwizerwa cyumukanishi, kurwanya cyane ibyangiritse nibiranga imiterere ihuza abanyamakuru, biroroshye gukoreshwa mubikoresho bikurikirana, kandi ugereranije na GTO thyristor gakondo, IGBT nuburyo bwa voltage-drive .Kubwibyo, biroroshye gukora, umutekano kandi mugari wo gukora.